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Conductive tape

Electrostatic chuck tape
For CVD, sputtering, and plasma etching processes

This is a conductive adhesive tape used to hold wafers on an electrostatic chuck in semiconductor manufacturing processes (CVD, sputtering, and plasma etching). By using this tape, glass wafers, support glass wafers, and insulating MEMS wafers, which previously required the application of a high voltage for the wafers to stick to the electrostatic chuck, can now be held by applying a low voltage. This reduces the stress put on wafers by applying a voltage.

Features

  • Conductive tape that can be used in CVD, sputtering, and  plasma etching processes.
  • Glass wafers and insulating MEMS wafers can be held on an electrostatic chuck by applying a low voltage.
  • The base material has excellent plasma resistance.
  • The base material and adhesive have heat resistance.

Specification

Model number
①STSI-PEN#25 ②STSI-PI#25
Material
①Conductive PEN ② Conductive PI
Width
240±2mm (For φ200mm) or 330±2mm (For φ300mm)
Length
20m or 80m
Base Film Thickness
25±2μm
Total Thickness
40±4μm

*The film thickness can be changed.

Configuration image

Physical property 

  Unit STSI-PEN#25 STSI-PI#25 Measurement
Surface resistivity Ω/□ 1.3×105 1.3×105 High resistivity meter
Surface resistivity
(Adhesive site)
Ω/□ >1.3×1013 >1.3×1013 High resistivity meter
Decay time sec <0.3 <0.3 FTM 101C-4046
(23℃×15%RH)

Adhesive strength

(vs Glass)

N/25mm 0.2 0.2 Peeling Speed : 300mm/min
Peeling Angle : 170°
Outgassing μg/g 34 43 170℃ 10min.
Transparency rate % 75 47 JIS K 7105

*This data is an actual measurement value, not a guaranteed value.

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